SI5913DC Datasheet, PDF (2/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

Si5913DC
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)^{b, d}
Maximum Junction-to-Foot (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)^{b, e}
Maximum Junction-to-Foot (Drain) (Schottky)
t≤5s
Steady State
t≤5s
Steady State
Symbol
R_thJA
R_thJF
R_thJA
R_thJF
Typical
62
32
77
33
Maximum
74
40
95
40
Unit
°C/W
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s
d. Maximum under Steady State conditions is 115 °C/W.
e. Maximum under Steady State conditions is 130 °C/W.
f. Package Limited.
g. See Solder Profile (http://www.vishay.com/doc?73257). The ChipFET is a leadless package. The end of the lead terminal is exposed cop-
per(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed an is
not required to ensure adequate bottom side soldering interconnection.
h. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_DS
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_GS = 0 V, I_D = - 250 µA
I_D = - 250 µA
V_DS = V_GS, I_D = - 250 µA
V_DS = 0 V, V_GS = ± 12 V
V_DS = - 20 V, V_GS = 0 V
V_DS = - 20 V, V_GS = 0 V, T_J = 55 °C
V_DS ≤ 5 V, V_GS = - 10 V
V_GS = - 10 V, I_D = - 3.7 A
V_GS = - 4.5 V, I_D = - 3.2 A
V_GS = - 2.5 V, I_D = - 2.5 A
V_DS = - 10 V, I_D = - 3.7 A
C_iss
C_oss
C_rss
Q_g
V_DS = - 10 V, V_GS = 0 V, f = 1 MHz
V_DS = - 10 V, V_GS = - 10 V, I_D = - 3.7 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
V_DS = - 10 V, V_GS = - 4.5 V, I_D = - 3.7 A
f = 1 MHz
V_DD = - 10 V, R_L = 3.4 Ω
I_D ≅ - 2.9 A, V_GEN = - 10 V, R_g = 1 Ω
V_DD = - 10 V, R_L = 3.4 Ω
I_D ≅ - 2.9 A, V_GEN = - 4.5 V, R_g = 1 Ω
Min.
- 20
- 0.6
- 15
1.2
Typ.
- 20
3
0.070
0.090
0.140
6
330
80
57
8
4
0.8
1.4
6
3
10
16
8
18
40
18
10
Max.
- 1.5
± 100
-1
- 10
0.084
0.108
0.175
12
6
12
6
20
24
15
27
60
27
15
Unit
V
mV/°C
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
www.vishay.com
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Document Number: 68920
S-82298-Rev. A, 22-Sep-08