SI5511DC Datasheet, PDF (9/12 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

Si5511DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
1
0.1
0.01
T_J = 150 °C
T_J = 25 °C
0.40
0.32
0.24
0.16
0.08
T_A = 125 °C
I_D = 2.3 A
T_A = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.3
1.2
I_D = 250 µA
1.1
1.0
0.9
0.8
0.00
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by r_DS(on)*
10
1
0.1
0.01
T_A = 25 °C
Single Pulse
0
10^-4 10^-3 10^-2 10^-1
1
10
Time (s)
Single Pulse Power
10 ² 10 ³
10 ms
100 ms
1s
10 s
DC
0.001
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which r_DS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
www.vishay.com
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