SI5511DC Datasheet, PDF (4/12 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

Si5511DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
5
12
V_GS = 5 V thru 3 V
4
V_GS = 2.5 V
9
3
6
3
0
0.0
0.20
V_GS = 2 V
V_GS = 1.5 V
0.6
1.2
1.8
2.4
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.16
0.12
0.08
0.04
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
I_D = 4.8 A
4
V_DS = 15 V
3
2
V_GS = 24 V
2
1
0
0.0
600
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
500
C_iss
400
300
200
100
C_oss
0 ^Crss
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V
I_D = 4.8 A
1.4
1.2
V_GS = 2.5 V
I_D = 3.7 A
1.0
1
0.8
0
0
1
2
3
4
5
6
Q_g - Total Gate Charge (nC)
Gate Charge
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4
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73787
S-72204-Rev. B, 22-Oct-07