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SI5511DC Datasheet, PDF (2/12 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET
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Si5511DC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
ID = 250 µA
ID = - 250 µA
ID = 250 µA
ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
rDS(on)
gfs
VDS = 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS ≤ 5 V, VGS = 4.5 V
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 4.8 A
VGS = - 4.5 V, ID = - 2.3 A
VGS = 2.5 V, ID = 3.8 A
VGS = - 2.5 V, ID = 1.8 A
VDS = 15 V, ID = 4.8 A
VDS = - 15 V, ID = - 2.3 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 15 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 15 V, VGS = 5 V, ID = 4.8 A
Qg
VDS = - 15 V, VGS = - 5 V, ID = - 3.2 A
N-Channel
VDS = 15 V, VGS = 4.5 V, ID = 4.8 A
Qgs
P-Channel
Qgd
VDS = - 15 V, VGS = - 4.5 V, ID = - 3.2 A
Gate Resistance
Rg
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min
30
- 30
0.7
- 0.7
15
- 10
Typa Max Unit
V
24.2
- 23.1
3.6
2.3
2
-2
100
- 100
1
-1
10
- 10
mV/°C
V
nA
µA
A
0.045 0.055
0.125 0.150
Ω
0.075 0.090
0.213 0.256
10.8
S
6.56
435
260
65
pF
55
30
42
4.7 7.1
4.1 6.2
4.2 6.3
3.8
4.6
nC
1.1
0.6
0.9
1.85
2.7
Ω
7.7
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Document Number: 73787
S-72204-Rev. B, 22-Oct-07
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