SI5511DC Datasheet, PDF (5/12 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.12
10
T_A = 150 °C
1
T_A = 25 °C
0.1
0.10
0.08
0.06
0.01
0.04
Si5511DC
Vishay Siliconix
I_D = 4.8 A
T_A = 125 °C
T_A = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.5
1.3
I_D = 250 µA
1.1
0.02
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
0.9
20
0.7
10
0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
10^-4 10^-3
10^-2 10^-1
1
10
Time (s)
Single Pulse Power
100 600
100
Limited by r_DS(on)*
10
1 ms
10 ms
1
0.1
0.01
BVDSS Limited
100 ms
1s
10 s
DC
0.001
T_A = 25 °C
Single Pulse
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which r_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
www.vishay.com
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