SI4650DY Datasheet, PDF (9/12 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
I_D = 8 A
10
0.04
T_J = 150 °C
1
T_J = 25 °C
0.03
0.1
0.02
Si4650DY
Vishay Siliconix
T_A = 125 °C
0.01
0.01
T_A = 25 °C
0.001
0.0
0.4
0.8
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1
10^-1
10^-2
10^-3
30 V
20 V
10^-4
10^-5
10^-6
0
25
50
75
100 125 150
T_J - Temperature (°C)
Reverse Current
100
Limited by R _DS(on)*
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
150
120
90
60
30
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10
1 ms
1
10 ms
100 ms
0.1
1s
10 s
T_A = 25 °C
DC
Single Pulse
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 70449
S10-0105-Rev. D, 18-Jan-10
www.vishay.com
9