SI4650DY Datasheet, PDF (8/12 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4650DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
1.2
32
V_GS = 10 V thru 4 V
0.9
24
0.6
16
T_C = 25 °C
8
0
0.0
0.022
3V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.020
0.018
V_GS = 4.5 V
0.3
0.0
0
2000
1600
1200
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
0.016
0.014
V_GS = 10 V
0.012
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 8 A
V_DS = 10 V
8
V_DS = 15 V
6
V_DS = 20 V
4
2
800
C_oss
400
0 ^Crss
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 8 A
1.5
V_GS = 10 V
1.2
V_GS = 4.5 V
0.9
0
0.0
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8
5.2
10.4
15.6
20.8
26.0
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 70449
S10-0105-Rev. D, 18-Jan-10