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SI4650DY Datasheet, PDF (2/12 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Si4650DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 1 mA
VGS = 0 V, ID = 1 mA
ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 1 mA
VDS = 0 V, VGS = ± 20 V
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 100 °C
VDS = 30 V, VGS = 0 V, TJ = 100 °C
VDS = 5 V, VGS = 10 V
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 8 A
VGS = 10 V, ID = 8 A
VGS = 4.5 V, ID = 5 A
VGS = 4.5 V, ID = 5 A
VDS = 15 V, ID = 8 A
VDS = 15 V, ID = 8 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 15 V, VGS = 10 V, ID = 8 A
Qg
VDS = 15 V, VGS = 10 V, ID = 8 A
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 8 A
Qgs
Channel-2
Qgd
VDS = 15 V, VGS = 4.5 V, ID = 8 A
Gate Resistance
Rg
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
f = 1 MHz
Min. Typ.a Max. Unit
Ch-1 30
V
Ch-2 30
Ch-1
Ch-1
35
mV/°C
-6
Ch-1 1
Ch-2 1
3
V
3
Ch-1
Ch-2
100
µA
100
Ch-1
0.001
Ch-2
Ch-1
0.06 0.5
mA
0.025
Ch-2
5
20
Ch-1 20
A
Ch-2 20
Ch-1
0.014 0.018
Ch-2
Ch-1
0.014 0.018
Ω
0.017 0.022
Ch-2
0.017 0.022
Ch-1
40
S
Ch-2
40
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
1550
1550
220
pF
275
80
80
25.5 40
25.5 40
10.5 16
10.5 16
nC
5
5
2.5
2.5
1.8 3.0
Ω
1.8 3.0
www.vishay.com
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Document Number: 70449
S10-0105-Rev. D, 18-Jan-10
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