SI4650DY Datasheet, PDF (5/12 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
I_D = 8 A
10
0.04
1
T_J = 150 °C
0.03
T_J = 25 °C
0.1
0.02
Si4650DY
Vishay Siliconix
T_A = 125 °C
0.01
0.01
T_A = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
I_D = 250 µA
0.2
- 0.1 ^{ID = 5 mA}
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
150
120
90
- 0.4
60
- 0.7
30
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R _DS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10
1 ms
1
10 ms
100 ms
0.1
1s
10 s
T_A = 25 °C
DC
Single Pulse
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 70449
S10-0105-Rev. D, 18-Jan-10
www.vishay.com
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