SI4650DY Datasheet, PDF (1/12 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4650DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Channel-1
30
0.018 at V_GS = 10 V
0.022 at V_GS = 4.5 V
Channel-2
30
0.018 at V_GS = 10 V
0.022 at V_GS = 4.5 V
I_D (A)^{a, e}
8.0
8.0
8.0
8.0
Q_g (Typ.)
10.5
10.5
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
30
V_SD (V)
Diode Forward Voltage
0.43 V at 1.0 A
I_F (A)^a
2.8
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook Logic dc-to-dc
• Low Current dc-to-dc
S₁/D₂ 1
G_{1 2}
S_{2 3}
G₂ 4
SO-8
8 D1
7 D1
6 S₁/D₂
5 S₁/D₂
D₁
D₂
Schottky Diode
G₁
G₂
Top View
Ordering Information: Si4650DY-T1-E3 (Lead (Pb)-free)
Si4650DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
30
V
V_GS
± 20
± 20
Continuous Drain Current (T_J = 150 °C)
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
8.0^e
7.8
7.8^{b, c}
8.0^e
7.8
7.8^{b, c}
Pulsed Drain Current (10 µs Pulse Width)
T_A = 70 °C
6.2^{b, c}
6.2^{b, c}
I_DM
30
30
A
Source-Drain Current Diode Current
Pulsed Source-Drain Current
T_C = 25 °C
T_A = 25 °C
I_S
I_SM
2.8
1.8^{b, c}
30
2.8
1.8^{b, c}
30
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
20
E_AS
20
T_C = 25 °C
3.1
20
20
mJ
3.1
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2
2^{b, c}
2
W
2^{b, c}
T_A = 70 °C
1.2^{b, c}
1.2^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Symbol
Typ.
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
R_thJA
52
Steady State
R_thJF
35
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W (Channel-1) and 110 °C/W (Channel-2).
e. Package limited.
Max.
62.5
40
Channel-2
Typ. Max.
52
62.5
35
40
Unit
°C/W
Document Number: 70449
S10-0105-Rev. D, 18-Jan-10
www.vishay.com
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