SI4563DY Datasheet, PDF (9/12 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.20
T_J = 150 °C
10
T_J = 25 °C
0.16
0.12
Si4563DY
Vishay Siliconix
I_D = 5 A
1
0.1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.4
I_D = 250 µA
0.3
0.2
I_D = 5 mA
0.1
0.0
- 0.1
- 0.2
- 0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0.08
T_A = 125 °C
0.04
T_A = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
1 ms
1
10 ms
100 ms
0.1
T_A = 25 °C
1s
Single Pulse
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
9