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SI4563DY Datasheet, PDF (2/12 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET
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Si4563DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
ID = - 250 µA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
IID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 16 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 40 V, VGS = 0 V
VDS = - 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V
VDS = - 5 V, VGS = - 10 V
VGS = 10 V, ID = 5 A
VGS = - 10 V, ID = - 5 A
VGS = 4.5 V, ID = 4 A
VGS = - 4.5 V, ID = - 4 A
VDS = 15 V, ID = 5 A
VDS = - 15 V, ID = - 5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 20 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 20 V, VGS = 10 V, ID = 5 A
Qg
VDS = - 20 V, VGS = - 10 V, ID = - 5 A
N-Channel
VDS = 20 V, VGS = 4.5 V ID = 5 A
Qgs
P-Channel
Qgd
VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A
Gate Resistance
Rg
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
40
- 40
0.8
- 0.8
20
- 20
Typ.a Max. Unit
V
40
- 40
- 4.8
4.0
mV/°C
2.0
V
- 2.2
100
nA
- 100
1
-1
µA
10
- 10
A
0.013 0.016
0.020 0.025
Ω
0.015 0.019
0.025 0.032
23
S
18
2390
2120
270
pF
310
165
235
56
85
52
80
26
40
25.5
39
nC
5.5
5.1
9.7
11.7
2.6
4.0
Ω
5.8
9.0
www.vishay.com
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Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
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