SI4563DY Datasheet, PDF (8/12 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET

Si4563DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
2.0
V_GS = 10 thru 4 V
3V
16
1.6
12
1.2
T_C = 125 °C
8
0.8
4
0
0.0
0.6
1.2
1.8
2.4
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.030
0.4
0.0
0.0
3500
25 °C
- 55 °C
0.6
1.2
1.8
2.4
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.027
0.024
V_GS = 4.5 V
2800
C_iss
2100
0.021
0.018
V_GS = 10 V
0.015
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5 A
8
V_DS = 10 V
6
V_DS = 20 V
4
V_DS = 30 V
2
0
0
11
22
33
44
55
Q_g - Total Gate Charge (nC)
Gate Charge
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8
1400
700
C_rss
0
0
8
C_oss
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 5 A
1.6
V_GS = 10 V
1.4
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09