SI4563DY Datasheet, PDF (1/12 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET

Si4563DY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel
P-Channel
V_DS (V)
R_DS(on) (Ω)
40
0.016 at V_GS = 10 V
0.019 at V_GS = 4.5 V
0.025 at V_GS = - 10 V
- 40
0.032 at V_GS = - 4.5 V
I_D (A)^a
8
8
-8
- 7.5
Q_g (Typ.)
56
6
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• CCFL Inverter
D₁
S₂
G₂
G₁
Top View
Ordering Information: Si4563DY-T1-E3 (Lead (Pb)-free)
Si4563DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
40
- 40
V
V_GS
± 16
T_C = 25 °C
8
-8
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
8
8^{b, c}
- 6.5
- 6.6^{b, c}
T_A = 70 °C
6.5^{b, c}
- 5.2^{b, c}
Pulsed Drain Current (10 µs Pulse Width)
I_DM
20
- 20
A
Source-Drain Current Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.7
1.6^{b, c}
- 2.7
- 1.6^{b, c}
Pulsed Source-Drain Current
I_SM
20
- 20
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0 1 mH
I_AS
20
E_AS
20
25
31.2
mJ
T_C = 25 °C
3.25
3.25
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2.10
2.0^{b, c}
2.10
W
2.0^{b, c}
T_A = 70 °C
1.25^{b, c}
1.25^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
Symbol
R_thJA
R_thJF
N-Channel
Typ.
Max.
45
62.5
29
38
P-Channel
Typ.
Max.
45
62.5
29
38
Unit
°C/W
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