SI4563DY Datasheet, PDF (4/12 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET

Si4563DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
V_GS = 10 thru 3 V
16
12
8
4
2V
0
0.0
0.6
1.2
1.8
2.4
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1.2
1.0
0.8
0.6
T_C = 125 °C
0.4
25 °C
0.2
- 55 °C
0.0
0.0
0.6
1.2
1.8
2.4
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.020
3500
0.018
0.016
0.014
0.012
V_GS = 4.5 V
V_GS = 10 V
0.010
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5 A
8
V_DS = 10 V
6
V_DS = 20 V
4
V_DS = 30 V
2
2800
C_iss
2100
1400
700
C_oss
C_rss
0
0
8
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 5 A
1.5
V_GS = 10 V
1.2
V_GS = 4.5 V
0.9
0
0
12
24
36
48
60
Q_g - Total Gate Charge (nC)
Gate Charge
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4
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09