72022 Datasheet, PDF (9/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4370DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SCHOTTKY
Reverse Current vs. Junction Temperature
20
10
1
0.1
30 V
24 V
0.01
Forward Voltage Drop
10
T_J = 150_C
T_J = 25_C
0.001
0.0001
0
200
25
50
75
100 125 150
T_J − Temperature (_C)
Capacitance
1
0.0
0.3
0.6
0.9
1.2
1.5
V_F − Forward Voltage Drop (V)
160
120
80
C_oss
40
0
0
6
12
18
24
30
V_DS − Drain-to-Source Voltage (V)
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
www.vishay.com
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