72022 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4370DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
Channel-1
30
Channel-2
r_DS(on) (W)
0.022 @ V_GS = 10 V
0.030 @ V_GS = 4.5 V
0.022 @ V_GS = 10 V
0.028 @ V_GS = 4.5 V
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
30
V_SD (V)
Diode Forward Voltage
0.50 V @ 1.0 A
I_D (A)
7.5
6.5
7.5
6.5
I_F (A)
2.0
FEATURES
D LITTLE FOOTr Plus Schottky
D Si4830DY Pin Compatible
D PWM Optimized
D 100% R_g Tested
APPLICATIONS
D Asymmetrical Buck-Boost DC/DC Converter
D₁
D₂
SO-8
S_{1 1}
8 ^D1
G_{1 2}
7 ^D1
G₁
S_{2 3}
6 ^D2
G_{2 4}
5 ^D2
Schottky Diode
G₂
Top View
Ordering Information: Si4370DY—E3 (Lead Free)
Si4370DY-T1—E3 (Lead Free with Tape and Reel)
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
10 secs
Steady State
Parameter
Symbol ^{Channel-1 Channel-2 Channel-1 Channel-2}
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
T_A = 25_C
T_A = 70_C
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
"12
"20
"12
7.5
5.7
6.0
4.6
30
1.7
0.9
2.0
1.1
1.3
0.7
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
t v 10 sec
Steady-State
Steady-State
Symbol
R_thJA
R_thJF
MOSFET
Typ
Max
52
62.5
93
110
35
40
Schottky
Typ
Max
53
62.5
93
110
35
40
Unit
_C/W
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