72022 Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4370DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET CHANNEL-1
Source-Drain Diode Forward Voltage
20
10
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
T_J = 150_C
1
T_J = 25_C
0.04
I_D = 7.5 A
0.03
0.02
0.01
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
100
0.2
80
I_D = 250 mA
−0.0
60
−0.2
40
−0.4
−0.6
20
−0.8
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
10^−3
10^−2
10^−1
1
10
Time (sec)
Safe Operating Area, Junction-to-Foot
100
Limited
by r_DS(on)
10
1 ms
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4
1
0.1
0.01
0.1
T_C = 25_C
Single Pulse
10 ms
100 ms
1s
10 s
dc
1
10
100
V_DS − Drain-to-Source Voltage (V)
Document Number: 72022
S-32621—Rev. C, 29-Dec-03