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72022 Datasheet, PDF (5/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Si4370DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET CHANNEL 1
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 93_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
10
Square Wave Pulse Duration (sec)
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
www.vishay.com
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