|
72022 Datasheet, PDF (6/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode | |||
|
◁ |
Si4370DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
VGS = 10 thru 4 V
25
25
MOSFET CHANNEL-2
Transfer Characteristics
20
20
3V
15
15
10
5
0
0
2
4
6
8
10
VDS â Drain-to-Source Voltage (V)
0.040
On-Resistance vs. Drain Current
10
TC = 125_C
5
25_C
â55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS â Gate-to-Source Voltage (V)
2000
Capacitance
0.032
0.024
0.016
VGS = 4.5 V
VGS = 10 V
1600
Ciss
1200
800
0.008
0.000
0
5
10
15
20
25
30
ID â Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 7.5 A
8
6
4
2
0
0
5
10
15
20
25
Qg â Total Gate Charge (nC)
www.vishay.com
6
400
Crss
Coss
0
0
5
10
15
20
25
30
VDS â Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
VGS = 10 V
1.6
ID = 7.5 A
1.4
1.2
1.0
0.8
0.6
â50 â25 0
25 50 75 100 125 150
TJ â Junction Temperature (_C)
Document Number: 72022
S-32621âRev. C, 29-Dec-03
|
▷ |