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VS-GT100LA120UX Datasheet, PDF (8/10 Pages) Vishay Siliconix – Trench IGBT technology
www.vishay.com
ORDERING INFORMATION TABLE
VS-GT100LA120UX
Vishay Semiconductors
Device code VS- G T 100 L A 120 U X
1
2
3
4
5
6
7
8
9
1 - Vishay Semiconductors product
2 - Insulated Gate Bipolar Transistor (IGBT)
3 - T = Trench IGBT
4 - Current rating (100 = 100 A)
5 - Circuit configuration (L = Low side chopper)
6 - Package indicator (A = SOT-227)
7 - Voltage rating (120 = 1200 V)
8 - Speed/type (U = Ultrafast IGBT)
9 - Diode (X = HEXFRED®)
CIRCUIT CONFIGURATION
4
Dimensions
Packaging information
3
2
1
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95036
www.vishay.com/doc?95037
Revision: 11-Jun-15
8
Document Number: 93099
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000