VS-GT100LA120UX Datasheet, PDF (5/10 Pages) Vishay Siliconix – Trench IGBT technology

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VS-GT100LA120UX
Vishay Semiconductors
40
35
E_on
30
25
20
15
10
E_off
0
0
10
20
30
40
50
R_g (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. R_g
T_J = 125 °C, I_C = 100 A, L = 500 μH,
V_CC = 600 V, V_GE = 15 V
250
230
210
T_J = 125 °C
190
170
150
T_J = 25 °C
130
110
90
70
100
1000
dI_F/dt (A/µs)
Fig. 13 - Typical t_rr Diode vs. dI_F/dt
V_R = 200 V, I_F = 50 A
1000
t_d(on)
t_r
t_f
t_d(off)
100
0
10
20
30
40
50
R_g (Ω)
Fig. 12 - Typical IGBT Switching Time vs. R_g
T_J = 125 °C, L = 500 μH, V_CC = 600 V,
I_C = 100 A, V_GE = 15 V
40
35
30
25
T_J = 125 °C
20
15
T_J = 25 °C
10
5
0
100
1000
dI_F/dt (A/µs)
Fig. 14 - Typical I_rr Diode vs. dI_F/dt
V_R = 200 V, I_F = 50 A
2650
2400
2150
T_J = 125 °C
1900
1650
1400
1150
900
T_J = 25 °C
650
400
100
1000
dI_F/dt (A/µs)
Fig. 15 - Typical Q_rr Diode vs. dI_F/dt
V_R = 200 V, I_F = 50 A
Revision: 11-Jun-15
5
Document Number: 93099
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