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| VS-GT100LA120UX Datasheet, PDF (2/10 Pages) Vishay Siliconix – Trench IGBT technology | |||
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www.vishay.com
VS-GT100LA120UX
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown
voltage
VBR(CES) VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 50 A
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 50 A, TJ = 125 °C
VGE = 15 V, IC = 100 A, TJ = 125 °C
Gate threshold voltage
Temperature coefficient ofï
threshold voltage
VGE(th)
VGE(th)/ïTJ
VCE = VGE, IC = 500 μA
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Collector to emitter leakage current
ICES
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
Diode reverse breakdown voltage
VBR
IR = 1 mA
IC = 50 A, VGE = 0 V
Diode forward voltage drop
VFM
IC = 100 A, VGE = 0 V
IC = 50 A, VGE = 0 V, TJ = 125 °C
IC = 100 A, VGE = 0 V, TJ = 125 °C
Diode reverse leakage current
Gate to emitter leakage current
IRM
VR = VR rated
TJ = 125 °C, VR = VR rated
IGES
VGE = ± 20 V
MIN.
1200
-
-
-
-
5
-
-
-
1200
-
-
-
-
-
-
-
TYP.
-
1.79
2.36
2.05
2.8
5.8
-15.6
0.5
0.052
-
2.53
3.32
2.66
3.70
4
0.6
-
MAX.
-
2.33
2.85
2.62
3.42
7
-
100
2
-
3.55
4.35
3.70
4.50
50
3
± 200
UNITS
V
mV/°C
μA
mA
V
V
μA
mA
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
IC = 100 A, VCC = 600 V, VGE = 15 V
Gate to collector charge (turn-on)
Qgc
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon
IC = 100 A, VCC = 600 V,
Eoff
VGE = 15 V, Rg = 5 ïï¬ï
Etot
L = 500 μH, TJ = 25 °C
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Eon
Eoff
Etot
td(on)
tr
IC = 100 A, VCC = 600 V,
VGE = 15 V, Rg = 5 ïï¬ ï
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
Turn-off delay time
td(off)
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode reverse recovery time
tf
RBSOA
SCSOA
trr
TJ = 150 °C, IC = 270 A, Rg = 22 ïï¬ï
VGE = 15 V to 0 V, VCC = 900 V,ï
VP = 1200 V
TJ = 150 °C, Rg = 22 ïï¬ï
VGE = 15 V to 0 V, VCC = 900 V,ï
VP = 1200 V
Diode peak reverse current
Irr
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
Diode recovery charge
Qrr
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr
Irr
IF = 50 A, dIF/dt = 200 A/μs, ï
VR = 200 V, TJ = 125 °C
Qrr
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
400
120
170
21.9
5.48
27.38
23.6
7.65
31.25
195
259
188
212
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
10
-
129
161
-
11
14
-
700
1046
-
208
257
-
17
21
-
1768
2698
UNITS
nC
mJ
ns
μs
ns
A
nC
ns
A
nC
Revision: 11-Jun-15
2
Document Number: 93099
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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