VS-GT100LA120UX Datasheet, PDF (4/10 Pages) Vishay Siliconix – Trench IGBT technology

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6.5
6.0
T_J = 25 °C
5.5
5.0
4.5
T_J = 125 °C
4.0
3.5
0.0002
0.0004
0.0006
0.0008
0.001
I_C (mA)
Fig. 5 - Typical IGBT Threshold Voltage
VS-GT100LA120UX
Vishay Semiconductors
300
250
200
T_J = 25 °C
150
T_J = 125 °C
100
50
0
0
1
2
3
4
5
6
7
V_FM (V)
Fig. 8 - Typical Diode Forward Characteristics
3.0
100 A
2.5
50 A
2.0
1.5
27 A
25
20
15
E_on
10
5
E_off
1.0
10 30 50 70 90 110 130 150
T_J (°C)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, V_GE = 15 V
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
I_F - Continuous Forward Current (A)
Fig. 7 - Maximum DC Forward Current vs.
Case Temperature
0
10 20 30 40 50 60 70 80 90 100
I_C (A)
Fig. 9 - Typical IGBT Energy Loss vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 600 V,
R_g = 5 , V_GE = 15 V
1000
t_f
t_d(off)
t_d(on)
100
t_r
10
0
20
40
60
80 100 120
I_C (A)
Fig. 10 - Typical IGBT Switching Time vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 600 V,
R_g = 5 , V_GE = 15 V
Revision: 11-Jun-15
4
Document Number: 93099
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