VS-GT100LA120UX Datasheet, PDF (3/10 Pages) Vishay Siliconix – Trench IGBT technology

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VS-GT100LA120UX
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction and storage temperature range
Junction to case
IGBT
Diode
T_J, T_Stg
R_thJC
Case to heatsink
Weight
R_thCS
Flat, greased surface
Mounting torque
Case style
MIN.
-40
-
-
-
-
-
SOT-227
TYP.
-
-
-
0.05
30
-
MAX.
150
0.27
0.37
-
-
1.3
UNITS
°C
°C/W
g
Nm
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
I_C - Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
1000
100
10
1
0.1
0.01
1
10
100
1000
V_CE (V)
Fig. 2 - IGBT Reverse Bias SOA
T_J = 150 °C, V_GE = 15 V
10 000
300
250
T_J = 25 °C
200
T_J = 125 °C
150
100
50
0
0
1
2
3
4
5
6
V_CE (V)
Fig. 3 - Typical IGBT Collector Current Characteristics
0.1
T_J = 125 °C
0.01
0.001
T_J = 25 °C
0.0001
100 300 500 700 900 1100
V_CES (V)
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
Revision: 11-Jun-15
3
Document Number: 93099
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