SIA810DJ Datasheet, PDF (8/10 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode

SiA810DJ
Vishay Siliconix
New Product
SCHOTTKY TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
100
10
10
1
0.1
0.01
0.001
20 V
5V
1
0.10
T_J = 150 °C
T_J = 25 °C
0.0001
0.00001
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Reverse Current vs. Junction Temperature
0.01
0.0
0.1
0.2
0.3
0.4
0.5
V_F - Forward Voltage Drop (V)
Forward Voltage Drop
300
240
180
120
60
0
0
4
8
12
16
20
V_RS - Reverse Voltage (V)
Capacitance
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8
Document Number: 74957
S-80436-Rev. B, 03-Mar-08