SIA810DJ Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode

New Product
SiA810DJ
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode
PRODUCT SUMMARY
V_DS (V)
20
R_DS(on) (Ω)
0.053 at V_GS = 4.5 V
0.063 at V_GS = 2.5 V
0.077 at V_GS = 1.8 V
I_D (A)^a
4.5
4.5
4.5
Q_g (Typ.)
4.1 nC
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
V_f (V)
Diode Forward Voltage
20
0.45 at 1 A
I_F (A)^a
2
PowerPAK SC-70-6 Dual
FEATURES
• Halogen-free
• LITTLE FOOT^® Plus Schottky Power MOSFET
• New Thermally Enhanced PowerPAK^®
RoHS
SC-70 Package
COMPLIANT
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
• Low V_f Trench Schottky Diode
APPLICATIONS
• Load Switch for Portable Devices (MP3/Cellular)
• Boost Converter
D
K
1
Marking Code
A
2
NC
GAX
K
3
D
0.75 mm
Part # code
XXX
Lot Traceability
G
K
6
D
and Date code
G
5
2.05 mm S
4
2.05 mm
S
Ordering Information: SiA810DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
V_DS
20
Reverse Voltage (Schottky)
V_KA
20
V
Gate-Source Voltage (MOSFET)
V_GS
±8
T_C = 25 °C
4.5^a
Continuous Drain Current (T_J = 150 °C) (MOSFET)
T_C = 70 °C
T_A = 25 °C
I_D
4.5^a
4.5^{a, b, c}
T_A = 70 °C
3.8^{b, c}
Pulsed Drain Current (MOSFET)
I_DM
20
A
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
T_C = 25 °C
T_A = 25 °C
I_S
4.5^a
1.6^{b, c}
Average Forward Current (Schottky)
I_F
2^b
Pulsed Forward Current (Schottky)
I_FM
5
T_C = 25 °C
6.5
Maximum Power Dissipation (MOSFET)
T_C = 70 °C
T_A = 25 °C
5
1.9^{b, c}
T_A = 70 °C
T_C = 25 °C
P_D
1.2^{b, c}
6.8
W
Maximum Power Dissipation (Schottky)
T_C = 70 °C
T_A = 25 °C
4.3
1.6^{b, c}
T_A = 70 °C
1.0^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_J, T_stg
- 55 to 150
°C
260
Document Number: 74957
S-80436-Rev. B, 03-Mar-08
www.vishay.com
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