SIA810DJ Datasheet, PDF (5/10 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode

New Product
SiA810DJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
100
0.14
0.12
10
0.10
T_J = 150 °C
T_J = 25 °C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.9
0.8
0.7
I_D = 250 µA
0.6
0.5
0.4
0.3
0.2
0.1
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0.08
I_D = 3.7 A, 125 °C
0.06
0.04
I_D = 3.7 A, 25 °C
0.02
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0
0.001 0.01
0.1
1
10
100 1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by R_DS(on)*
10
1
0.1
T_A = 25 °C
Single Pulse
100 µs
BVDSS Limited
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 74957
S-80436-Rev. B, 03-Mar-08
www.vishay.com
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