SIA810DJ Datasheet, PDF (2/10 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode

SiA810DJ
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)^{b, f}
Maximum Junction-to-Case (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)^{b, g}
Maximum Junction-to-Case (Drain) (Schottky)
t≤5s
Steady State
t≤5s
Steady State
Symbol
R_thJA
R_thJC
R_thJA
R_thJC
Typical
52
12.5
62
15
Maximum
65
16
76
18.5
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
g. Maximum under Steady State conditions is 110 °C/W.
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_DS
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
C_iss
C_oss
C_rss
Q_g
V_GS = 0 V, I_D = 250 µA
I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ± 8 V
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 55 °C
V_DS ≤ 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 3.7 A
V_GS = 2.5 V, I_D = 3.4 A
V_GS = 1.8 V, I_D = 1.1 A
V_DS = 10 V, I_D = 3.7 A
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
V_DS = 10 V, V_GS = 8 V, I_D = 4.8 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
V_DS = 10 V, V_GS = 4.5 V, I_D = 4.8 A
f = 1 MHz
V_DD = 10 V, R_L = 2.6 Ω
I_D ≅ 3.8 A, V_GEN = 4.5 V, R_g = 1 Ω
V_DD = 10 V, R_L = 2.6 Ω
I_D ≅ 3.8 A, V_GEN = 8 V, R_g = 1 Ω
Min. Typ.
Max.
Unit
20
V
1
- 2.8
mV/°C
0.4
1
V
± 100
nA
1
µA
10
20
A
0.043 0.053
0.052 0.063
Ω
0.062 0.077
15
S
400
70
pF
40
7
11.5
4.1
7
nC
0.65
0.8
2.5
Ω
5
10
32
50
30
45
53
80
ns
5
10
12
20
15
25
10
15
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Document Number: 74957
S-80436-Rev. B, 03-Mar-08