SIA810DJ Datasheet, PDF (4/10 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode

SiA810DJ
Vishay Siliconix
New Product
MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
20
10
16
V_GS = 5 thru 2.5 V
8
V_GS = 2 V
12
6
8
V_GS = 1.5 V
4
V_GS = 1 V
0
0.0
0.4
0.8
1.2
1.6
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.16
0.14
V_GS = 1.8 V
0.12
0.10
0.08
V_GS = 2.5 V
0.06
V_GS = 4.5 V
0.04
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
I_D = 4.8 A
6
V_DS = 10 V
V_DS = 16 V
4
2
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
4
2
T_C = 25 °C
T_C = 125 °C
0
T_C = - 55 °C
0.0
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
600
500
400
C_iss
300
200
100
C_oss
0
C_rss
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
1.5
V_GS = 4.5 V, 2.5 V, 1.8 V, I_D = 3.7 A
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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4
Document Number: 74957
S-80436-Rev. B, 03-Mar-08