SI5853CDC Datasheet, PDF (8/10 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET with Schottky Diode

Si5853CDC
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
1
1
I_R = 20 V
0.1
I_R = 5 V
T_J = 150 °C
0.01
0.001
0
25
50
75
100 125 150
T_J - Junction Temperature (°C)
Reverse Current vs. Junction Temperature
T_J = 25 °C
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V_F - Forward Voltage Drop (V)
Forward Voltage Drop
180
150
120
90
60
30
0
0
5
10
15
20
25
30
V_KA - Reverse Voltage (V)
Capacitance
www.vishay.com
8
Document Number: 69774
S10-0547-Rev. B, 08-Mar-10