SI5853CDC Datasheet, PDF (5/10 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET with Schottky Diode

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.30
0.25
Si5853CDC
Vishay Siliconix
I_D = 2.5 A
0.20
T_J = 150 °C
T_J = 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.15
125 °C
0.10
25 °C
0.05
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
0.7
40
I_D = 250 µA
0.6
30
0.5
20
0.4
10
0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
10
Limited by R_DS(on)*
0
0.0001 0.001 0.01 0.1 1
10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 µs
Document Number: 69774
S10-0547-Rev. B, 08-Mar-10
1
1 ms
10 ms
100 ms
0.1
1 s, 10 s
DC
T_A = 25 °C
Single Pulse
BVDSS
Limited
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
5