SI5853CDC Datasheet, PDF (4/10 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET with Schottky Diode

Si5853CDC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
2.0
V_GS = 5 V thru 2.5 V
8
1.6
6
V_GS = 2 V
4
2
V_GS = 1.5 V
0
0
0.30
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.25
V_GS = 1.8 V
0.20
0.15
V_GS = 2.5 V
0.10
V_GS = 4.5 V
0.05
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
I_D = 2.9 A
6
V_DS = 10 V
4
V_DS = 16 V
2
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
1.2
0.8
0.4
0
0
600
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
500
400
C_iss
300
200
C_oss
100
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 2.5 A
1.6
V_GS = 1.8 V
1.4
1.2
V_GS = 4.5 V, 2.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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4
Document Number: 69774
S10-0547-Rev. B, 08-Mar-10