SI5853CDC Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET with Schottky Diode

Si5853CDC
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
I_D (A)
0.104 at V_GS = - 4.5 V
- 4^a
- 20
0.144 at V_GS = - 2.5 V
- 3.6
0.205 at V_GS = - 1.8 V
-3
Q_g (Typ.)
4.2 nC
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
20
V_f (V)
Diode Forward Voltage
0.46 at 0.5 A
I_F (A)
1
1206-8 ChipFET
1
A
K
A
K
S
D
G
D
Marking Code
JF XX
Lot Traceability
and Date Code
Part # Code
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT^® Plus Schottky Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Charging Switch for Portable Devices
- With Integrated Low V_f Trench Schottky Diode
S
K
G
Bottom View
D
A
Ordering Information: Si5853CDC-T1-E3 (Lead (Pb)-free)
Si5853CDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T_J = 150 °C) (MOSFET)
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
Soldering Recommendation (Peak Temperature)^{d, e}
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_KA
V_GS
I_D
I_DM
I_S
I_F
I_FM
P_D
T_J, T_stg
Limit
- 20
20
±8
- 4^a
- 3.4^a
- 2.9^{b, c}
- 2.3^{b, c}
- 10
- 2.6
- 1.2^{b, c}
1
3
3.1
2
1.5^{b, c}
0.9^{b, c}
2.5
1.6
1.2
0.76
- 55 to 150
260
Unit
V
A
W
°C
Document Number: 69774
S10-0547-Rev. B, 08-Mar-10
www.vishay.com
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