SI5519DU Datasheet, PDF (8/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

Si5519DU
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
2.0
V_GS = 5 V thru 3 V
15
1.5
V_GS = 2.5 V
10
5
0
0
0.20
V_GS = 2 V
V_GS = 1.5 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1.0
0.5
0.0
0.0
800
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.16
0.12
0.08
V_GS = 2.5 V
0.04
V_GS = 4.5 V
0.00
0
5
10
15
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5.4 A
8
6
V_DS = 10 V
4
V_GS = 16 V
2
600
C_iss
400
200
C_rss
0
0
4
C_oss
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V
I_D = 4 A
1.4
1.2
V_GS = 2.5 V
I_D = 4 A
1.0
0.8
0
0
2
4
6
8
10
12
Q_g - Total Gate Charge (nC)
Gate Charge
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8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74406
S-81449-Rev. B, 23-Jun-08