SI5519DU Datasheet, PDF (7/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
Si5519DU
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Single Pulse
10^-3
1
Duty Cycle = 0.5
Notes:
P _DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 87 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.05
0.1
Single Pulse
0.02
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
www.vishay.com
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