SI5519DU Datasheet, PDF (5/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

Si5519DU
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
10
0.08
T_J = 150 °C
1
0.06
0.1
T_J = 25 °C
0.04
I_D = 5 A
T_A = 125 °C
T_A = 25 °C
0.01
0.02
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.6
0.00
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
I_D = 250 µA
25
1.4
20
1.2
15
1.0
10
0.8
5
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
100
Time (s)
Single Pulse Power
1000
100
Limited by R_DS(on)*
10
10 ms
100 ms
1
1s
10 s
0.1
DC
BVDSS Limited
0.01
T_A = 25 °C
Single Pulse
0.001
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
www.vishay.com
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