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SI5519DU Datasheet, PDF (2/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET
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Si5519DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
ID = 250 µA
ID = - 250 µA
ID = 250 µA
ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS ≤ 5 V, VGS = 4.5 V
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 6.1 A
VGS = - 4.5 V, ID = - 4.8 A
VGS = 2.5 V, ID = 1.6 A
VGS = - 2.5 V, ID = - 1.05 A
VDS = 10 V, ID = 6.7 A
VDS = - 10 V, ID = - 4.8 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 10 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 10 V, VGS = 10 V, ID = 4.8 A
Qg
VDS = - 10 V, VGS = - 10 V, ID = - 3.2 A
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 4.8 A
Qgs
P-Channel
Qgd
VDS = - 10 V, VGS = - 4.5 V, ID = - 3.2 A
Gate Resistance
Rg
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
20
- 20
0.6
- 0.6
25
- 10
Typ.a Max. Unit
V
20.74
- 18.2
4.0
1.83
1.8
- 1.8
100
- 100
1
-1
10
- 10
mV/°C
V
nA
µA
A
0.030 0.036
0.053 0.064
Ω
0.052 0.063
0.078 0.095
15
S
9.5
660
475
108
pF
135
65
100
11.65 17.5
11.7 18
5.4 8.1
6.0
9.0
nC
1.48
1.05
1.4
2.1
5.2
Ω
9.8
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2
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
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