SI5517DU_08 Datasheet, PDF (8/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

Si5517DU
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
5
V_GS = 5 V
2.5 V
3V
4.5 V
12
4V
4
3.5 V
9
2V
3
6
1.5 V
3
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.30
0.25
V_GS = 1.8 V
0.20
0.15
V_GS = 2.5 V
0.10
V_GS = 4.5 V
0.05
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
I_D = 4.6 A
6
V_DS = 10 V
4
V_DS = 16 V
2
0
0
3
6
9
12
Q_g - Total Gate Charge (nC)
Gate Charge
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8
2
1
0
0.0
800
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
600
C_iss
400
200
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
1.4
V_GS = 4.5 V
I_D = 3.3 A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature ( °C)
On-Resistance vs. Junction Temperature
Document Number: 73529
S-81449-Rev. B, 23-Jun-08