SI5517DU_08 Datasheet, PDF (5/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.08
T_J = 150 °C
10
0.07
0.06
T_J = 25 °C
0.05
25 °C
0.04
Si5517DU
Vishay Siliconix
I_D = 4.4 A
125 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.9
0.8
I_D = 250 µA
0.7
0.6
0.5
0.4
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10 ^{ID(on) limited}
0.03
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
40
30
20
10
0
0.001 0.01
0.1
1
10 100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
I_DM limited
100 µs
Document Number: 73529
S-81449-Rev. B, 23-Jun-08
1 ms
1
10 ms
100 ms
1s
0.1
T_A = 25 °C
10 s
Single Pulse
DC
BVDSS limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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