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SI5517DU_08 Datasheet, PDF (3/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET
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Si5517DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Dynamica
Turn-On Delay Time
Rise Time
td(on)
tr
N-Channel
VDD = 10 V, RL = 2.8 Ω
ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
Turn-Off Delay Time
Fall Time
td(off)
tf
P-Channel
VDD = - 10 V, RL = 2.7 Ω
ID ≅ - 3.7 A, VGEN = - 4.5 V, Rg = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
Turn-On Delay Time
Rise Time
td(on)
tr
N-Channel
VDD = 10 V, RL = 2.8 Ω
ID ≅ 3.6 A, VGEN = 8 V, Rg = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
Turn-Off Delay Time
Fall Time
td(off)
tf
P-Channel
VDD = - 10 V, RL = 2.7 Ω
ID ≅ - 3.7 A, VGEN = - 8 V, Rg = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
IS
TC = 25 °C
N-Ch
P-Ch
Pulse Diode Forward Currenta
ISM
N-Ch
P-Ch
Body Diode Voltage
VSD
IS = 1.2 A, VGS = 0 V
IS = - 1.0 A, VGS = 0 V
N-Ch
P-Ch
Body Diode Reverse Recovery Time
trr
N-Ch
P-Ch
Body Diode Reverse Recovery Charge
Qrr
N-Channel
N-Ch
IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C P-Ch
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ta
P-Channel
N-Ch
IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C P-Ch
tb
N-Ch
P-Ch
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Min.
Typ.a Max.
20
8
65
35
40
40
10
55
5
5
12
15
26
30
8
45
0.8
- 0.8
45
30
21
15
29
11
16
19
30
15
100
55
60
60
15
85
10
10
20
25
40
45
15
70
6.9
- 6.9
20
- 15
1.2
- 1.2
70
60
32
30
Unit
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73529
S-81449-Rev. B, 23-Jun-08
www.vishay.com
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