SI5517DU_08 Datasheet, PDF (2/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

Si5517DU
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 1 mA
V_GS = 0 V, I_D = - 1 mA
N-Ch
P-Ch
V_DS Temperature Coefficient
ΔV_DS/T_J
I_D = 250 µA
I_D = - 250 µA
N-Ch
P-Ch
V_GS(th) Temperature Coefficient
ΔV_GS(th)/T_J
I_D = 250 µA
I_D = - 250 µA
N-Ch
P-Ch
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = - 250 µA
N-Ch
P-Ch
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 8 V
N-Ch
P-Ch
V_DS = 20 V, V_GS = 0 V
N-Ch
Zero Gate Voltage Drain Current
I_DSS
V_DS = - 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 55 °C
P-Ch
N-Ch
On-State Drain Current^b
I_D(on)
V_DS = - 20 V, V_GS = 0 V, T_J = 55 °C
V_DS ≤ 5 V, V_GS = 4.5 V
V_DS ≤ - 5 V, V_GS = - 4.5 V
P-Ch
N-Ch
P-Ch
V_GS = 4.5 V, I_D = 4.4 A
N-Ch
V_GS = - 4.5 V, I_D = - 3.3 A
P-Ch
Drain-Source On-State Resistance^b
R_DS(on)
V_GS = 2.5 V, I_D = 4.1 A
V_GS = - 2.5 V, I_D = - 2.8 A
N-Ch
P-Ch
V_GS = 1.8 V, I_D = 1.8 A
N-Ch
V_GS = - 1.8 V, I_D = - 0.76 A
P-Ch
Forward Transconductance^b
g_fs
V_DS = 10 V, I_D = 4.4 A
V_DS = - 10 V, I_D = - 3.3 A
N-Ch
P-Ch
Dynamic^a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
N-Channel
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
P-Channel
V_DS = - 10 V, V_GS = 0 V, f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
V_DS = 10 V, V_GS = 8 V, I_D = 4.4 A N-Ch
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
V_DS = - 10 V, V_GS = - 8 V, I_D = - 4.6 A P-Ch
N-Ch
N-Channel
P-Ch
Q_gs
V_DS = 10 V, V_GS = 4.5 V, I_D = 4.4 A
P-Channel
N-Ch
P-Ch
Q_gd
V_DS = - 10 V, V_GS = - 4.5 V, I_D = - 1.8 A ^N-Ch
P-Ch
Gate Resistance
R_g
f = 1 MHz
N-Ch
P-Ch
Min.
20
- 20
0.4
- 0.4
20
- 15
Typ.^a Max.
Unit
V
17
- 20
- 2.6
2.4
mV/°C
1
V
-1
100
nA
- 100
1
-1
µA
10
- 10
A
0.032 0.039
0.060 0.072
0.037 0.045
Ω
0.083 0.100
0.0455 0.055
0.108 0.131
22
S
9
520
455
100
pF
105
60
65
10.5
16
9.1
14
6
9
5.5
8.5
nC
0.91
0.75
0.7
1.5
1.9
Ω
8
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Document Number: 73529
S-81449-Rev. B, 23-Jun-08