SI4833BDY Datasheet, PDF (8/11 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET with Schottky Diode

Si4833BDY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.1
10
0.01
0.001
0.0001
0.00001
30 V
20 V
1
T_J = 150 °C
0.1
0.01
T_J = 25 °C
0.000001
0
25
50
75
100 125 150
T_J - Junction Temperature (°C)
Reverse Current vs. Junction Temperature
0.001
0
0.1
0.2
0.3
0.4
0.5
V_F - Forward Voltage Drop (V)
Forward Voltage Drop
500
400
300
200
100
0
0
6
12
18
24
30
V_KA - Reverse Voltage (V)
Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67537.
www.vishay.com
Document Number: 67537
8
S11-1649-Rev. B, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000