SI4833BDY Datasheet, PDF (4/11 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET with Schottky Diode

Si4833BDY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
3.0
16
V_GS = 10 V thru 5 V
12
V_GS = 4 V
8
4
V_GS = 3 V
0
0.0
1.0
2.0
3.0
4.0
5.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
2.0
1.5
T_C = 25 °C
1.0
T_C = 125 °C
T_C = - 55 °C
0
0.0
1.0
2.0
3.0
4.0
5.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.150
600
0.120
0.090
V_GS = 4.5 V
480
C_iss
360
0.060
0.030
V_GS = 10 V
0.000
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5 A
8
V_DS = 15 V
6
V_DS = 10 V
4
V_DS = 20 V
240
120
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 3.6 A
1.3
1.1
V_GS = 10 V
V_GS = 4.5 V
0.9
2
0.7
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
Document Number: 67537
4
S11-1649-Rev. B, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000