SI4833BDY Datasheet, PDF (5/11 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET with Schottky Diode

Si4833BDY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.5
0.4
1
T_J = 150 °C
0.3
0.1
T_J = 25 °C
0.2
I_D = 3.6 A
0.01
0.1
T_J = 125 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.0
0
T_J = 25 °C
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.6
50
0.4
40
I_D = 250 μA
0.2
I_D = 5 mA
30
0
20
- 0.2
10
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
I_DM Limited
10
I_D Limited
1
Limited by R_DS(on)*
1 ms
10 ms
100 ms
0.1
T_C = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 67537
www.vishay.com
S11-1649-Rev. B, 15-Aug-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000