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| SI4833BDY Datasheet, PDF (3/11 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET with Schottky Diode | |||
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Si4833BDY
Vishay Siliconix
SCHOTTKY SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Irm
IF = 1 A
IF = 1 A, TJ = 125 °C
VR = 30 V
VR = 30 V, TJ = 75 °C
Junction Capacitance
VR = 30 V, TJ = 125 °C
CT
VR = 15 V
Min. Typ. Max. Unit
0.36 0.44
V
0.29 0.35
0.03
0.2
0.6
5
mA
7.5
60
5.3
pF
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 67537
www.vishay.com
S11-1649-Rev. B, 15-Aug-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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