SI4833BDY Datasheet, PDF (7/11 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET with Schottky Diode

MOSFETS TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
Si4833BDY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 120 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 67537
www.vishay.com
S11-1649-Rev. B, 15-Aug-11
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000