SI4501BDY Datasheet, PDF (8/15 Pages) Vishay Siliconix – Complementary (N- and P-Channel) MOSFET

Si4501BDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
10
V_GS = 5 V thru 3 V
32
8
V_GS = 2.5 V
24
6
V_GS = 2 V
T_C = 25 °C
16
4
8
0
0.0
0.040
V_GS = 1.5 V
V_GS = 1 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2
T_C = 125 °C
0
0.0
0.4
0.8
T_C = - 55 °C
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2200
0.035
0.030
0.025
0.020
V_GS = 2.5 V
V_GS = 4.5 V
1760
C_iss
1320
C_rss
880
C_oss
440
0.015
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
I_D = 6 A
6
5
V_DS = 4 V
V_DS = 6 V
3
0
0
2
3
5
6
8
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 6 A
1.3
1.1
V_GS = 2.5 V
V_GS = 4.5 V
0.9
2
0.7
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Gate Charge
www.vishay.com
8
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67441
S11-0245-Rev. A, 14-Feb-11