SI4501BDY Datasheet, PDF (4/15 Pages) Vishay Siliconix – Complementary (N- and P-Channel) MOSFET

Si4501BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
10
V_GS = 10 V thru 4 V
32
8
24
V_GS = 3 V
6
T_C = 25 °C
16
4
8
0
0.0
0.020
V_GS = 2 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2
T_C = 125 °C
T_C = - 55 °C
0
0.0
0.6
1.2
1.8
2.4
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1100
0.018
880
C_iss
0.016
V_GS = 4.5 V
660
0.014
0.012
V_GS = 10 V
0.010
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 15 V
6
V_DS = 10 V
4
V_DS = 20 V
2
0
0.0
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4
3.4
6.8
10.2
13.6
17.0
Q_g - Total Gate Charge (nC)
Gate Charge
440
C_oss
220
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 10 A
1.6
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67441
S11-0245-Rev. A, 14-Feb-11