SI4501BDY Datasheet, PDF (1/15 Pages) Vishay Siliconix – Complementary (N- and P-Channel) MOSFET

Si4501BDY
Vishay Siliconix
Complementary (N- and P-Channel) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
N-Channel 30
0.017 at V_GS = 10 V
0.020 at V_GS = 4.5 V
P-Channel
0.027 at V_GS = - 4.5 V
-8
0.037 at V_GS = - 2.5 V
I_D (A)^{a Q}g ^(Typ.)
12
7.9
11
-8
16.5
- 6.8
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4501BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Level Shift
S₂
• Load Switch
G₂
D
G₁
S₁
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
V_DS
30
-8
V
V_GS
± 20
±8
T_C = 25 °C
12
-8
T_C = 70 °C
T_A = 25 °C
I_D
9.5
- 6.4
9^{b, c}
- 6.4^{b, c}
T_A = 70 °C
7.2^{b, c}
- 5.1^{b, c}
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
I_DM
40
- 40
A
T_C = 25 °C
T_A = 25 °C
I_S
4.0
2.2^{b, c}
- 2.8
- 1.8^{b, c}
I_SM
40
- 40
L = 0.1 mH
I_AS
E_AS
5
1.25
-5
1.25
mJ
T_C = 25 °C
4.5
3.1
T_C = 70 °C
T_A = 25 °C
P_D
2.8
2.5^{b, c}
2.0
2^{b, c}
W
T_A = 70 °C
1.6^{b, c}
1.28^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Symbol
Typ. Max.
Maximum Junction-to-Ambient^{b, d}
t  10 s
R_thJA
40
50
Maximum Junction-to-Foot (Drain)
Steady State
R_thJF
22
28
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 95 °C/W (N-Channel) and 110 °C/W (P-Channel).
P-Channel
Typ. Max.
52
62.5
32
40
Unit
°C/W
Document Number: 67441
S11-0245-Rev. A, 14-Feb-11
www.vishay.com
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